2SC5876U3T106

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC5876U3T106 is a single NPN bipolar junction transistor (BJT) designed for high-speed switching and low-frequency amplification. It operates with a maximum collector-emitter voltage of 60V and supports a continuous collector current of 500mA. The device features a power dissipation rating of 200mW within an SOT-323 surface-mount package. Key electrical characteristics include a transition frequency of 300MHz, a DC current gain range of 120 to 390, and a typical saturation voltage of 150mV at full load.

Single Bipolar Transistors Feature Summary

• Engineered for high-speed switching applications with a typical fall time of 80ns at 500mA collector current.
• Provides low saturation voltage performance to minimize power loss during conduction states.
• Utilizes the compact SOT-323 (UMT3) surface-mount package for efficient board space utilization.

Single Bipolar Transistors Applications

• Low-frequency amplification circuits
• High-speed switching logic interfaces
• General-purpose signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official documentation to confirm packaging configuration, as variations exist between reel, cut tape, and MouseReel formats. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Ensure the component is not designated for automotive use unless explicitly stated in the qualified product list. Cross-reference the part number with the official ROHM database to validate current production status and long-term supply availability plans.

Single Bipolar Transistors Selection Notes

Select this component when a 60V NPN transistor with 500mA capability is required in a minimal footprint. The 300MHz transition frequency makes it suitable for faster digital switching compared to standard general-purpose transistors. Consider the low saturation voltage for efficiency-critical designs. Verify that the thermal management strategy accommodates the 200mW dissipation limit in the SOT-323 package under expected operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the ROHM 2SC5876 series of small-signal transistors. It is specifically optimized for speed and saturation performance within the UMT3/SOT-323 form factor. The series is positioned for consumer electronics and industrial control applications requiring reliable switching in compact designs. It serves as a standard-grade component with a defined long-term supply plan.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed direct substitutes are not identified in the provided source material. Designers should consult the official ROHM replacement guide or datasheet for electrically equivalent alternatives with matching pinouts and ratings.