SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2SC5890FS-TL-E is an NPN small signal bipolar transistor designed for high-frequency amplifier applications. Manufactured by Renesas Electronics Corporation, this component operates with a maximum collector current of 75mA and a DC current gain (hFE) of at least 100 at 20mA collector current and 5V collector-emitter voltage. It features a maximum power dissipation of 700mW and supports operation up to 7.8GHz. The device is housed in a surface-mount 3-MPAK package, measuring 2 x 3 x 1.4 mm, and is lead-free and RoHS compliant.
Verify the specific ordering suffix and package variant against the official Renesas datasheet to ensure compatibility with your design requirements. Confirm that the component meets all necessary regulatory standards for your target market. Check for any recent updates to the product lifecycle status or recommended replacement parts before finalizing procurement plans.
Select this component when designing circuits requiring NPN small signal transistors for UHF frequency ranges. Ensure the application stays within the specified 75mA collector current and 700mW power dissipation limits. Consider the 3-MPAK package dimensions for PCB layout constraints and thermal management requirements in high-frequency environments.
This part belongs to Renesas' portfolio of small signal bipolar transistors intended for radio frequency applications. It serves as a specialized component for amplifying weak signals in the UHF band. The device is part of a broader range of semiconductor solutions provided by Renesas Electronics Corporation for communication and signal processing systems.
Public confirmed substitute part numbers are not available in the provided documentation. Consult the official Renesas datasheet or contact technical support for cross-reference information regarding compatible alternatives.