2SC5890FS-TL-E

2SC5890FS-TL-E

$0.24
  • Description:RF TRANS NPN 12V 7.8GHZ 3-MPAK
  • Series:-

SKU:d03a8a624312 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 7.8GHZ 3-MPAK
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7.8GHz
  • Noise Figure (dB Typ @ f):1dB @ 900MHz
  • Gain:12dB
  • Power - Max:700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 20mA, 5V
  • Current - Collector (Ic) (Max):75mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-MPAK
  • Grade:-
  • Qualification:-

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2SC5890FS-TL-E

Overview

The 2SC5890FS-TL-E is an NPN small signal bipolar transistor designed for high-frequency amplifier applications. Manufactured by Renesas Electronics Corporation, this component operates with a maximum collector current of 75mA and a DC current gain (hFE) of at least 100 at 20mA collector current and 5V collector-emitter voltage. It features a maximum power dissipation of 700mW and supports operation up to 7.8GHz. The device is housed in a surface-mount 3-MPAK package, measuring 2 x 3 x 1.4 mm, and is lead-free and RoHS compliant.

Feature Summary

  • Optimized for UHF band RF small signal amplification
  • High-frequency performance supporting up to 7.8GHz operation
  • Surface-mount construction in a compact 3-lead MPAK package

Applications

  • UHF band RF small signal amplification
  • High frequency amplifier circuits
  • RF signal processing modules

Procurement Notes

Verify the specific ordering suffix and package variant against the official Renesas datasheet to ensure compatibility with your design requirements. Confirm that the component meets all necessary regulatory standards for your target market. Check for any recent updates to the product lifecycle status or recommended replacement parts before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring NPN small signal transistors for UHF frequency ranges. Ensure the application stays within the specified 75mA collector current and 700mW power dissipation limits. Consider the 3-MPAK package dimensions for PCB layout constraints and thermal management requirements in high-frequency environments.

Part Context

This part belongs to Renesas' portfolio of small signal bipolar transistors intended for radio frequency applications. It serves as a specialized component for amplifying weak signals in the UHF band. The device is part of a broader range of semiconductor solutions provided by Renesas Electronics Corporation for communication and signal processing systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult the official Renesas datasheet or contact technical support for cross-reference information regarding compatible alternatives.

2SC5890FS-TL-E2SC5890FS-TL-E
$0.24
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