2SC6010(T2MITUM,FM

Single Bipolar Transistors Overview

The Toshiba 2SC6010 is a silicon NPN triple diffused transistor designed for high-voltage switching applications. It features a collector-emitter voltage (VCEO) of 285 V and a collector-base voltage (VCBO) of 600 V. The device supports a DC collector current of 1.0 A and a pulse current of 2.0 A, with a maximum power dissipation of 1.0 W at 25°C. Key electrical characteristics include a minimum DC current gain (hFE) of 80 to 100 depending on the operating point, and a maximum fall time (tf) of 0.24 μs at IC = 0.3 A. The component is housed in a TO-92 package.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon NPN construction optimized for high-speed switching performance
• High breakdown voltage capability with VCBO rated at 600 V
• Low saturation voltage characteristics for efficient power handling

Single Bipolar Transistors Applications

• High voltage switching circuits
• Switching regulator designs
• DC-DC converter implementations

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as the datasheet indicates this requires specific product-by-product confirmation. Ensure the ordering suffix matches the required lead-free finish or packaging configuration. Confirm that the application does not involve unintended usage scenarios such as medical or aerospace equipment, which are explicitly excluded from warranty coverage.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector-base voltage ratings up to 600 V combined with moderate current handling capabilities. The device is suitable for applications where fast turn-off times are critical, specifically noting the 0.24 μs maximum fall time specification. Consider the thermal derating requirements for ambient temperatures exceeding 25°C to maintain the 1.0 W power dissipation limit safely within the safe operating area.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of general-purpose discrete transistors intended for computer, office, and industrial equipment. It utilizes a triple diffused process technology to achieve superior switching speed compared to standard epitaxial types. The component is categorized under high-voltage switching devices rather than linear amplification applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers were not identified in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (VCBO) is rated at 600 V.

What is the typical fall time for this transistor?

The maximum fall time (tf) is specified as 0.24 μs when the collector current is 0.3 A.

Is this component suitable for medical instruments?

No, the datasheet explicitly excludes medical instruments from intended usage, classifying them as unintended usage scenarios.