2SC6016-TD-E

$0.74

Description：NPN EPITAXIAL PLANAR SILICON
Series：*

SKU:31d61f35006b Category: Single Bipolar Transistors Brand: Sanyo

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Product introduction

2SC6016-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanyo. Its product description is NPN EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC6016-TD-E

Description：NPN EPITAXIAL PLANAR SILICON
Series：*
Mfr：Sanyo
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC6016-TD-E

2SC6016-TD-E

Single Bipolar Transistors Overview

The Sanyo 2SC6016-TD-E is an NPN epitaxial planar silicon transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 160V and a maximum continuous collector current of 1.5A. The device utilizes the MBIT process to achieve low saturation voltage and fast switching speeds. It is housed in a PCP (SOT-89) surface-mount package with three terminals, suitable for compact circuit designs requiring reliable performance under high-voltage conditions.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for robust operation in demanding circuits
Low collector-to-emitter saturation voltage for improved efficiency
Fast switching characteristics enabled by advanced manufacturing processes

Single Bipolar Transistors Applications

DC/DC converter circuits
Relay driver stages
Lamp drivers
Motor drivers

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TD-E against official Sanyo Semicon Device documentation to confirm tape-and-reel packaging and halogen-free compliance status. Ensure the component matches the required PCP package dimensions and terminal configuration for your PCB layout. Cross-reference the manufacturer's latest datasheet for any updates on electrical ratings or environmental certifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require an NPN transistor capable of handling 160V collector-emitter voltage and 1.5A current in a small surface-mount form factor. It is appropriate for applications prioritizing low saturation voltage and rapid switching transitions over high power dissipation capabilities found in larger packages.

Single Bipolar Transistors Part Context

This part belongs to the family of PNP/NPN epitaxial planar silicon transistors manufactured using the MBIT process. These devices are engineered for general-purpose high-voltage switching tasks, offering a balance of current handling capacity and voltage tolerance within compact plastic-epoxy packages like the PCP/SOT-89.