2SC6017-E

Single Bipolar Transistors Overview

The 2SC6017-E is a single NPN bipolar junction transistor manufactured by onsemi, designed for high-current switching applications. It features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 10A. The device exhibits low saturation voltage characteristics to minimize power loss during conduction. Key electrical parameters include a transition frequency (fT) of 200MHz, providing adequate bandwidth for RF and switching operations up to that limit. The component is housed in a surface-mount TO-252-3 package with a maximum power dissipation of 950mW.

Single Bipolar Transistors Feature Summary

• Single NPN bipolar transistor configuration optimized for high-current switching
• Low VCE(sat) design reduces conduction losses in power circuits
• Transition frequency of 200MHz supports RF and fast switching applications

Single Bipolar Transistors Applications

• High-current switching circuits
• RF applications requiring moderate bandwidth
• Power management systems utilizing surface-mount topology

Single Bipolar Transistors Procurement Notes

This component is scheduled for obsolescence and has been discontinued by the manufacturer. Availability is limited to existing stock from distributors. Verify end-of-life status before finalizing designs. No new production units are available. Check distributor listings for remaining inventory quantities and lead times associated with last-time buys or surplus stock.

Single Bipolar Transistors Selection Notes

Select this part only if its 50V voltage rating and 10A current capacity align with circuit requirements. Consider the TO-252-3 package constraints for thermal management. Due to obsolescence, evaluate alternative components with similar electrical specifications and availability. Ensure the replacement offers comparable low saturation voltage and transition frequency performance for the intended application.

Single Bipolar Transistors Part Context

The 2SC6017-E belongs to onsemi's general-purpose and low VCE(sat) transistor series. It is paired with the PNP counterpart 2SA2169 in complementary configurations. This family targets applications requiring efficient high-current handling with minimal voltage drop across the collector-emitter junction during saturation.

Single Bipolar Transistors Replacement Considerations

The NJVMJD3055T4G is listed as a recommended substitute by the manufacturer. Verify compatibility regarding pinout, voltage ratings, and current capabilities before implementation.