Single Bipolar Transistors 2SC6017-TL-E product image

2SC6017-TL-E

  • Description:TRANS NPN 50V 10A TP-FA
  • Series:-

SKU:dfb9857a0d1d Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC6017-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 10A TP-FA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC6017-TL-E

  • Description:TRANS NPN 50V 10A TP-FA
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:360mV @ 250mA, 5A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 2V
  • Power - Max:950 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TP-FA

Single Bipolar Transistors datasheet and documents for 2SC6017-TL-E

2SC6017-TL-E

Single Bipolar Transistors Overview

The 2SC6017-TL-E is a silicon NPN bipolar junction transistor designed for high-current switching applications. It features a collector current of 10A and a collector-emitter voltage rating of 50V. The device utilizes a TP-FA package configuration, suitable for surface-mount installation. Key electrical characteristics include a maximum collector-base voltage of 100V and an emitter-base voltage of 2V. The component operates within a temperature range up to +150°C, providing robust performance for general-purpose low VCE(sat) requirements in single-element configurations.

Single Bipolar Transistors Feature Summary

  • High-current switching capability with 10A collector current
  • Low saturation voltage design for efficiency
  • Silicon NPN construction for reliability

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • High-current load driving
  • Power management systems requiring low VCE(sat)

Single Bipolar Transistors Procurement Notes

Verify component status as the 2SC6017-TL-E is listed as obsolete by the manufacturer. Confirm availability through authorized distributors or check for recommended substitutes such as NJVMJD3055T4G. Ensure all ordering details match the specific suffix requirements for the TP-FA package before finalizing procurement actions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high DC collector current and moderate voltage ratings. The low VCE(sat) characteristic makes it suitable for power-efficient switching designs. Consider the surface-mount TP-FA package constraints during PCB layout. Verify thermal management needs given the +150°C maximum operating temperature limit.

Single Bipolar Transistors Part Context

This part belongs to onsemi's series of general-purpose and low VCE(sat) transistors. It is specifically engineered for high-current switching tasks where standard small-signal devices are insufficient. The NPN configuration provides straightforward integration into common emitter or switch-mode topologies typical in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The NJVMJD3055T4G is identified as a manufacturer-recommended substitute. Evaluate pin compatibility and electrical parameter alignment when transitioning from the obsolete 2SC6017-TL-E to ensure circuit functionality remains intact without redesign.

2SC6017-TL-E2SC6017-TL-E

Click on the inquiry