2SC6026MFV-Y,L3F

Single Bipolar Transistors Overview

The 2SC6026MFV-Y,L3F is a single NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device operates with a transition frequency of 60 MHz and supports a maximum power dissipation of 150 mW. Key electrical characteristics include a DC current gain (hFE) of at least 200 at 2 mA and 6 V, and a saturation voltage of 250 mV at 10 mA base and 100 mA collector currents. It utilizes the SOT-723 surface-mount package.

Single Bipolar Transistors Feature Summary

• Single NPN configuration for signal amplification and switching
• Integrated internal resistors for biasing applications
• Compact surface-mount design for space-constrained layouts

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-power switching applications
• Biasing networks in electronic systems

Single Bipolar Transistors Procurement Notes

Verify the exact part number suffix against official Toshiba documentation to confirm pinout and internal resistor values. Ensure compatibility with RoHS3 standards and check for any specific handling requirements related to the small outline package during assembly processes.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring low-voltage operation with moderate current capabilities. Consider the 60 MHz transition frequency for high-speed switching needs. Evaluate thermal management requirements given the 150 mW power dissipation limit in the compact SOT-723 package.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's lineup of pre-biased transistors designed to simplify circuit design by integrating resistors directly onto the chip. These devices reduce board space and component count compared to discrete BJT solutions, offering a streamlined approach for biasing requirements in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-reference specifications such as hFE, Vceo, and package dimensions when evaluating alternative suppliers or pin-compatible devices.