2SC6026MFVGR,L3F

Single Bipolar Transistors Overview

The 2SC6026MFVGR,L3F is a single NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device operates with a transition frequency of 60 MHz and a maximum power dissipation of 150 mW. Key electrical characteristics include a DC current gain of at least 200 at 2 mA and 6 V, and a saturation voltage of 250 mV at 10 mA base and 100 mA collector currents. It utilizes the VESM surface-mount package.

Single Bipolar Transistors Feature Summary

• NPN bipolar junction transistor configuration for general switching applications
• High DC current gain capability for efficient signal amplification
• Integrated thermal protection via specified maximum junction temperature rating
• Surface-mount design optimized for automated assembly processes

Single Bipolar Transistors Applications

• General purpose switching circuits
• Low-power amplifier stages
• Signal processing in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging and tape-and-reel specifications. Confirm RoHS3 compliance status matches project requirements. Check the manufacturer datasheet for specific handling instructions regarding moisture sensitivity level 1. Ensure the supplier provides official documentation to validate authenticity and traceability before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate voltage ratings and high current gain is required. The 60 MHz transition frequency suits applications beyond simple low-frequency switching. Compare the 150 mA current limit against load requirements. Consider the VESM package dimensions for PCB layout constraints relative to alternative packages like SOT-723 variants.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete semiconductor product line focusing on small-signal transistors. The 2SC6026 series is designed for use in portable devices where space efficiency and reliable performance are critical. It complements other Toshiba offerings in the BJT category, providing standardized solutions for circuit designers requiring specific voltage and current characteristics in miniature form factors.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-reference electrical parameters such as Vceo, Ic, and hFE with potential alternatives. Ensure pinout compatibility and package dimensions match the existing footprint. Verify that any replacement meets the same environmental and regulatory standards.