2SC6040,T2Q(J

Single Bipolar Transistors Overview

The Toshiba 2SC6040 is a silicon NPN triple diffused transistor designed for high-speed and high-voltage switching applications. It features a collector-emitter breakdown voltage of 410 V and a collector-base breakdown voltage of 800 V. The device supports a continuous collector current of 1.0 A and a pulse current of 2.0 A, with a maximum power dissipation of 1.0 W at 25°C. Key electrical characteristics include a typical fall time of 0.2 μs at IC = 0.3 A and a DC current gain ranging from 50 to 120 depending on the operating point.

Single Bipolar Transistors Feature Summary

• Triple diffused construction optimized for high-speed switching performance
• High breakdown voltage capability suitable for demanding power circuits
• Low saturation voltage characteristics for efficient operation

Single Bipolar Transistors Applications

• Switching regulator circuits
• DC-DC converter designs
• High-voltage switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as the datasheet indicates this requires specific product-by-product confirmation. Ensure the ordering suffix matches the required lead-free finish or package variant. Confirm that the component meets all applicable safety standards for general electronics usage before integration into final systems.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with fast switching speeds. The 800 V collector-base rating provides significant headroom for inductive loads. Consider the thermal derating requirements carefully, as power dissipation decreases linearly with increasing ambient temperature above 25°C. Ensure base drive currents are sufficient to maintain low saturation voltages during high-current operation.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup, utilizing a triple diffused process technology. It is housed in a JEDEC TO-92 style plastic package (specifically designated as 2-7D101A). The device is intended for general electronic equipment applications, excluding those requiring extraordinarily high reliability such as medical or aerospace instrumentation.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and absolute maximum ratings if considering alternative manufacturers' equivalents for high-voltage switching roles.