2SC6042,T2HOSH1Q(J

Single Bipolar Transistors Overview

The Toshiba 2SC6042 is a silicon NPN triple diffused transistor designed for high-speed, high-voltage switching applications. It features a collector-emitter breakdown voltage of 375 V and a collector-base breakdown voltage of 800 V. The device supports a maximum DC collector current of 1.0 A and a pulse current of 2.0 A. Key electrical characteristics include a fall time of 0.2 μs at IC = 0.3 A and a minimum DC current gain (hFE) ranging from 80 to 200 depending on the operating point. It operates within a junction temperature range of -55 °C to 150 °C.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon construction optimized for high-speed switching performance
• High breakdown voltage capability with VCBO rated at 800 V and VCEO at 375 V
• Fast switching speed characterized by a maximum fall time of 0.2 microseconds

Single Bipolar Transistors Applications

• High-speed switching circuits
• Switching regulator designs
• DC-DC converter implementations

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T2HOSH1Q(J against official Toshiba Semiconductor and Storage documentation to confirm package type, lead finish, and tape-and-reel specifications. Ensure compliance with RoHS directives and intended usage restrictions outlined in the manufacturer's reliability handbook before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand high voltage isolation combined with rapid switching transitions. Evaluate the safe operating area curves to ensure thermal stability under pulsed load conditions. Confirm that the required hFE levels align with the base drive capabilities available in the target application design.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC series of NPN transistors, which are widely utilized in general-purpose electronics. The triple diffused manufacturing process distinguishes these devices by offering superior switching speeds compared to standard planar types, making them suitable for modern power management topologies.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent VCBO/VCEO ratings and switching times to preserve circuit timing integrity.

Single Bipolar Transistors FAQ

What is the maximum fall time specified for the 2SC6042?

The maximum fall time is 0.2 microseconds when tested at a collector current of 0.3 A.

Does the 2SC6042 support continuous operation at its maximum collector current?

Yes, it supports a DC collector current of 1.0 A, though the pulse current rating reaches 2.0 A under specific conditions.

What is the collector-base breakdown voltage rating?

The collector-base breakdown voltage (VCBO) is rated at 800 V.