2SC6043-AE

Single Bipolar Transistors Overview

The onsemi 2SC6043-AE is a 50V, 2A NPN single MP bipolar transistor utilizing the MBIT process. It features low collector-to-emitter saturation voltage and high-speed switching capabilities with a transition frequency of 420 MHz. The device operates in an MP package (TO-92/SC-51) with a maximum power dissipation of 1W and a junction temperature rating up to 150°C.

Single Bipolar Transistors Feature Summary

• Adoption of MBIT process for enhanced performance
• Low collector to emitter saturation voltage
• High current capacitance characteristics
• High-speed switching capability

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers
• Electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'AE' corresponds to the 1,000 pieces per box shipping configuration as documented in the official datasheet. Confirm that the component meets Pb-free requirements and matches the MP package outline drawing dimensions before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring fast switching speeds and low saturation voltage within a compact TO-92 form factor. Ensure the design accommodates the 1W power dissipation limit and verify that the 50V collector-emitter breakdown voltage aligns with the circuit's operational requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SC6043 series manufactured by onsemi. It is a general-purpose NPN silicon transistor designed for medium-power switching applications. The device is available in the MP package, which is compatible with standard through-hole mounting techniques used in various electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists or manufacturer substitution guides for verified equivalent parts. Do not assume compatibility based solely on pinout or generic specifications without verifying absolute maximum ratings and electrical characteristics against the original datasheet.

Single Bipolar Transistors FAQ

What is the typical DC current gain (hFE) at 100mA?

The typical DC current gain (hFE1) is 560 when measured at VCE=2V and IC=100mA.

What is the maximum collector current rating?

The continuous collector current (IC) is rated at 2A, with a pulse collector current (ICP) rating of 4A.

What is the transition frequency (fT) of the device?

The gain-bandwidth product (fT) is typically 420 MHz, measured at VCE=10V and IC=300mA.