2SC6076(TE16L1,NV)

$0.75

Description：TRANS NPN 80V 3A PW-MOLD
Series：-

SKU:eecc424fb3a6 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC6076(TE16L1,NV) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 80V 3A PW-MOLD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC6076(TE16L1,NV)

Description：TRANS NPN 80V 3A PW-MOLD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 100mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 500mA, 2V
Power - Max：10 W
Frequency - Transition：150MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：PW-MOLD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC6076(TE16L1,NV)

2SC6076(TE16L1,NV)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC6076 is a silicon NPN epitaxial type transistor manufactured using the PCT process. It is designed for power amplifier and power switching applications. Key electrical characteristics include a low collector saturation voltage of VCE(sat) = 0.5 V (max) at IC = 1A, and high-speed switching with a storage time tstg = 0.4 μs (typ.).

Single Bipolar Transistors Feature Summary

Utilizes Silicon NPN Epitaxial Type construction with PCT Process technology.
Engineered for low collector saturation voltage to enhance efficiency in power applications.
Capable of high-speed switching operations suitable for demanding circuit requirements.

Single Bipolar Transistors Applications

Power Amplifier Applications
Power Switching Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (TE16L1 or NV) against official Toshiba documentation to confirm packaging and reel specifications. Ensure the component matches the exact part number 2SC6076 to avoid functional mismatches. Cross-reference datasheet revisions for any parameter updates before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring NPN switching with low saturation voltage. The PCT process offers distinct performance benefits over standard bipolar technologies. Evaluate thermal management requirements based on the specified saturation voltage and current ratings for optimal system reliability.

Single Bipolar Transistors Part Context

The 2SC6076 belongs to Toshiba's lineup of silicon NPN epitaxial transistors. These devices are characterized by their use of the PCT process, which supports efficient power handling. The series targets applications needing reliable switching and amplification capabilities within compact electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba substitution guides for verified alternatives. Generic cross-references may not match the specific PCT process characteristics or saturation voltage limits defined in the original datasheet.