Single Bipolar Transistors 2SC6082-EPN-1E product image

2SC6082-EPN-1E

$0.50
  • Description:TRANS NPN 50V 15A TO-220F-3SG
  • Series:-

SKU:5fd24d9b19e6 Category: Brand:

  
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2SC6082-EPN-1E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 15A TO-220F-3SG. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC6082-EPN-1E

  • Description:TRANS NPN 50V 15A TO-220F-3SG
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):15 A
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 375mA, 7.5A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 330mA, 2V
  • Power - Max:2 W
  • Frequency - Transition:195MHz
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F-3SG
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC6082-EPN-1E

2SC6082-EPN-1E

Single Bipolar Transistors Overview

The 2SC6082-1E is a high-current NPN bipolar junction transistor manufactured by onsemi. It features a TO-220F-3SG package and utilizes the MBIT process for enhanced performance. The device supports a collector current of 15 A with a peak pulse rating of 20 A. Key electrical parameters include a collector-to-emitter voltage (VCEO) of 50 V, a collector-to-base voltage (VCBO) of 60 V, and an emitter-to-base voltage (VEBO) of 6 V. It offers a low saturation voltage of 200 mV at 7.5 A and a gain-bandwidth product of 195 MHz.

Single Bipolar Transistors Feature Summary

  • Adopts MBIT process technology for optimized switching characteristics
  • Provides large current capacitance suitable for high-power applications
  • Delivers low collector-to-emitter saturation voltage to reduce power loss
  • Ensures high-speed switching performance for efficient circuit operation

Single Bipolar Transistors Applications

  • Switching regulators
  • Driver circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The standard configuration utilizes a magazine packing format containing fifty pieces per unit. Confirm that the component meets all required environmental standards before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust NPN switching capabilities with high current handling. The low saturation voltage makes it suitable for efficiency-critical designs. Ensure thermal management aligns with the specified maximum junction temperature limits during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SC6082 series of bipolar transistors designed for general-purpose high-current switching. It is housed in a TO-220F-3SG package, which facilitates through-hole mounting. The device is engineered to provide reliable performance in demanding electronic environments.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter alignment when considering cross-references.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The absolute maximum DC collector current is rated at 15 A.

Does the device support pulse operation?

Yes, the device supports a peak pulse collector current of 20 A with a pulse width of 10 μs or less and a duty cycle of 1% or less.

What is the typical gain-bandwidth product?

The gain-bandwidth product (fT) is typically 195 MHz under conditions of VCE=10V and IC=2A.

2SC6082-EPN-1E2SC6082-EPN-1E
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