2SC6094-TD-E

Single Bipolar Transistors Overview

The 2SC6094-TD-E is a single NPN silicon epitaxial planar transistor manufactured by onsemi. It utilizes FBET and MBIT processes to achieve high-current switching capabilities with low collector-to-emitter saturation voltage. Key electrical parameters include a maximum collector current of 3 A, a collector-emitter breakdown voltage of 60 V, and a collector-base voltage of 100 V. The device features a gain-bandwidth product of 390 MHz and supports a maximum power dissipation of 3.5 W. It operates within a junction temperature range up to +150°C and is housed in a PCP-3 surface-mount package.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Designed for high-current switching applications
• Features low collector-to-emitter saturation voltage
• Provides high-speed switching characteristics

Single Bipolar Transistors Applications

• DC/DC converters
• Relay drivers
• Lamp drivers
• Motor drivers
• Inverters

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels as the part status is listed as obsolete. Confirm RoHS and REACH compliance details via official documentation before integration. Ensure supply chain stability due to end-of-life status. Validate pinout compatibility with existing PCB layouts. Review datasheet revisions for any manufacturing changes.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust NPN switching with high current handling. Consider the PCP-3 package for surface-mount assembly requirements. Evaluate thermal management needs given the 3.5 W power dissipation limit. Compare gain bandwidth against circuit frequency demands. Assess saturation voltage impact on overall efficiency.

Single Bipolar Transistors Part Context

This component belongs to the 2SC6094 series of bipolar junction transistors. It represents an evolution in high-current switching technology using specific epitaxial planar processes. The device is designed to replace older discrete solutions in power management circuits. It shares functional similarities with other high-current NPN transistors but offers distinct packaging and process advantages.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.