Single Bipolar Transistors 2SC6097-TL-E product image

2SC6097-TL-E

$1.05
  • Description:TRANS NPN 60V 3A TP-FA
  • Series:-

SKU:579ebd56e333 Category: Brand:

  
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2SC6097-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 3A TP-FA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC6097-TL-E

  • Description:TRANS NPN 60V 3A TP-FA
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:135mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 100mA, 2V
  • Power - Max:800 mW
  • Frequency - Transition:390MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TP-FA
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC6097-TL-E

2SC6097-TL-E

Single Bipolar Transistors Overview

The 2SC6097-TL-E is a single NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in a TO-251 (IPAK) surface-mount package with three leads. The device supports a maximum collector-emitter voltage of 60 V and a continuous collector current of 3 A. Key electrical parameters include a transition frequency of 390 MHz, a DC current gain minimum of 300 at 100 mA and 2 V, and a maximum power dissipation of 800 mW. It operates within a temperature range up to +150°C junction temperature.

Single Bipolar Transistors Feature Summary

  • High current handling capability suitable for power switching applications
  • Low saturation voltage for improved efficiency
  • Surface-mount packaging for automated assembly

Single Bipolar Transistors Applications

  • DC/DC converter circuits
  • Relay driver stages
  • Motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official onsemi documentation to confirm pinout and electrical tolerances. Confirm RoHS compliance status through the manufacturer's material declaration. Check for obsolescence notices or product change notifications prior to final design approval.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current density in a compact surface-mount form factor. Ensure thermal management strategies account for the 800 mW power dissipation limit. Verify that the required voltage headroom exceeds the 60 V collector-emitter rating under all operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SC6097 series of NPN transistors designed for general-purpose power switching. It is distinct from other onsemi BJT families by its specific combination of 3 A current rating and TO-251 packaging. The device is engineered for applications demanding low saturation voltage and high gain.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure any replacement matches the TO-251 footprint and maintains equivalent voltage and current ratings.

2SC6097-TL-E2SC6097-TL-E
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