2SC6142(Q)

Single Bipolar Transistors Overview

The 2SC6142(Q) is an NPN bipolar transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter breakdown voltage of 375 V and a maximum collector current of 1.5 A. The device offers a minimum DC current gain (hFE) of 100 at a collector current of 100 mA and a collector-emitter voltage of 5 V. Packaged in the PW-Mold2 format, this component is designed for high-voltage switching applications.

Single Bipolar Transistors Feature Summary

• NPN bipolar transistor configuration
• High voltage capability up to 375 V
• Suitable for high-speed switching operations

Single Bipolar Transistors Applications

• AC adaptors
• High-speed high-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm package type and compliance status. Ensure the part number matches the exact electrical specifications required for the target circuit design before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high collector-emitter voltage ratings and moderate current handling capabilities. Consider the PW-Mold2 package dimensions and thermal characteristics when planning the PCB layout and heat dissipation strategy for the application.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's lineup of general-purpose and switching bipolar transistors. It is engineered to provide reliable performance in consumer and industrial electronic equipment where high-voltage isolation and efficient switching are critical operational requirements.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference guides for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' components without verifying pinout compatibility and electrical parameter limits.