2SCR293PFRAT100

Single Bipolar Transistors Overview

The 2SCR293PFRAT100 is an NPN silicon bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It features a single configuration housed in an SOT-89-3 (MPT3) surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 1 A with a power dissipation rating of 0.5 W. It exhibits a transition frequency (fT) of 320 MHz and a DC current gain (hFE) ranging from 270 to 680 at 100 mA. The saturation voltage is 350 mV, and the maximum operating temperature is +150°C.

Single Bipolar Transistors Feature Summary

• Automotive-grade reliability compliant with AEC-Q101 standards for high-temperature operation up to 150°C.
• Low collector-emitter saturation voltage (VCE(sat)) optimized for efficient middle-power driver applications.
• High DC current gain (hFE) ensuring effective signal amplification and switching performance.

Single Bipolar Transistors Applications

• Middle-power driver circuits in automotive systems
• Low-frequency amplifier stages
• General-purpose switching applications requiring automotive qualification

Single Bipolar Transistors Procurement Notes

Verify that the specific suffix 'FRA' corresponds to the tape-and-reel packaging format intended for automated assembly. Confirm the component meets AEC-Q101 requirements if used in automotive designs. Check for any Product Change Notifications (PCN) regarding package dimensions or marking changes. Ensure the ordering quantity aligns with the standard minimum packing quantity of 1000 units per reel.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with 30 V breakdown and 1 A current capacity is required in an SOT-89 package. It is suitable for designs needing AEC-Q101 compliance. Compare hFE ranges and VCE(sat) values against circuit requirements. Consider thermal management due to the 0.5 W power dissipation limit in the compact MPT3 package.

Single Bipolar Transistors Part Context

This part belongs to the 2SxR series of medium-power transistors designed for automotive applications. It shares pinout compatibility with other variants in the series, such as the 2SCR293PHZG, facilitating potential design swaps within the same family while maintaining consistent mechanical footprint and electrical characteristics for similar use cases.

Single Bipolar Transistors Replacement Considerations

The 2SCR293PHZGT100 is a confirmed substitute with identical pinout, package, and electrical specifications. Both parts are recommended packages within the same product line, ensuring direct interchangeability in existing designs without modification.