2SCR372P5T100Q

Single Bipolar Transistors Overview

The 2SCR372P5T100Q is an NPN silicon middle power transistor from ROHM Semiconductor, designed for low-frequency amplifier applications. It features a collector-emitter voltage (VCEO) of 120 V and a continuous collector current (IC) of 0.7 A. The device operates with a maximum power dissipation of 0.5 W at 25°C, rising to 2.0 W when mounted on a ceramic board. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 390 and a transition frequency (fT) of approximately 220 MHz. It exhibits a low collector-emitter saturation voltage of 300 mV maximum under specified conditions.

Single Bipolar Transistors Feature Summary

• Low saturation voltage design optimized for efficient driver performance
• High DC current gain classification supporting robust signal amplification
• Surface-mount construction in MPT3 package for automated assembly

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• Middle power driver stages
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T100Q against the official datasheet to confirm taping specifications and marking codes. Ensure compatibility with standard surface mount reflow processes. Confirm that the application environment remains within the specified storage temperature range of -55°C to +150°C to maintain product integrity and solderability.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling up to 120 V combined with moderate current capabilities. The MPT3 package provides a balance between thermal performance and board space efficiency. Consider the hFE ranking requirements for consistent gain performance in amplifier stages. Evaluate thermal derating needs if operating above 25°C ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the 2SCR372 series of NPN middle power transistors manufactured by ROHM Semiconductor. It utilizes silicon planar technology and is housed in the SC-62 / SOT-89 form factor. The series is engineered for general-purpose electronics where reliable low-frequency amplification and driving are required without the complexity of integrated circuits.

Single Bipolar Transistors Replacement Considerations

Consult ROHM documentation for direct pin-compatible alternatives such as the 2SCR372PHZGT100 or 2SCR372P5T100. Verify that any substitute maintains identical voltage ratings, current limits, and package dimensions to ensure seamless integration into existing layouts.