2SCR372P5T100R

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR372P5T100R is an NPN silicon bipolar junction transistor (BJT) designed for low-frequency amplifier applications. It features a collector-emitter voltage of 120V and a continuous collector current of 0.7A. The device operates with a maximum power dissipation of 0.5W in standard mounting conditions, rising to 2.0W on a ceramic board. Key electrical characteristics include a DC current gain ranging from 120 to 390 at 100mA, a transition frequency of 220MHz, and a maximum collector-emitter saturation voltage of 300mV under specified drive conditions.

Single Bipolar Transistors Feature Summary

• Low saturation voltage design optimized for efficient switching and amplification performance
• High breakdown voltage capability suitable for medium-power driver circuits
• Surface-mount construction utilizing the MPT3 package for compact integration

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• Middle power driver applications
• General purpose switching tasks

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape width and reel size. Ensure that the component meets the required hFE classification rank for your circuit design. Confirm compliance with RoHS directives and check for any relevant REACH SVHC declarations prior to final procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required for low-frequency signal processing. Consider the thermal management requirements carefully, as power dissipation varies significantly based on the mounting surface type. Verify that the base drive current can support the desired collector current while maintaining the specified low saturation voltage.

Single Bipolar Transistors Part Context

This part belongs to the 2SCR372 series of middle power transistors manufactured by ROHM Semiconductor. It is housed in the SOT-89 (MPT3) package, which provides a balance between power handling and small form factor. The device is intended for use in general electronic equipment rather than specialized automotive or medical applications requiring extreme reliability.

Single Bipolar Transistors Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers. Cross-referencing should be performed using identical pinouts, packages, and electrical ratings to ensure functional compatibility without redesigning the host circuit.