2SCR375P5T100Q

$0.89

Description：TRANS NPN 120V 1.5A MPT3
Series：-

SKU:a594fc974ceb Category: Single Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

2SCR375P5T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 120V 1.5A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR375P5T100Q

Description：TRANS NPN 120V 1.5A MPT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 80mA, 800mA
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 200mA, 5V
Power - Max：500 mW
Frequency - Transition：200MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：MPT3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SCR375P5T100Q

2SCR375P5T100Q

Single Bipolar Transistors Overview

The 2SCR375P5T100Q is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 120 V and a continuous collector current of 1.5 A. The device features a transition frequency of 200 MHz and a maximum power dissipation of 0.5 W under standard conditions, or up to 2.0 W when mounted on a ceramic board. It utilizes an MPT3 (SOT-89) surface-mount package and supports a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

Low saturation voltage capability for efficient switching performance
High DC current gain ranging from 120 to 390 at specified operating points
Designed specifically for low-frequency amplifier applications

Single Bipolar Transistors Applications

Low frequency amplifiers
Middle power driver circuits

Single Bipolar Transistors Procurement Notes

Verify the specific 'Q' suffix against the manufacturer's latest datasheet to confirm if it denotes a distinct electrical ranking or packaging variation compared to the base 2SCR375P5 model. Ensure that the ordering information matches the required hFE classification rank and tape width specifications provided in the official documentation before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling up to 120 V combined with moderate current capacity. Consider the thermal derating requirements carefully, as the standard power dissipation rating is limited to 0.5 W without adequate heatsinking. Verify that the SOT-89 footprint aligns with the PCB layout constraints and that the transition frequency meets the signal processing bandwidth requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SCR series of middle power transistors from ROHM Semiconductor. It serves as the NPN counterpart to the PNP 2SAR375PHZGT100R within the same product family. Both devices share similar voltage ratings and are housed in the MPT3 package, providing complementary options for push-pull or differential circuit configurations.

Single Bipolar Transistors Replacement Considerations

The 2SCR375P5T100 is a verified substitute part number offering identical electrical characteristics and physical dimensions. When replacing the Q-suffixed variant, verify that the hFE binning requirements are satisfied by the standard T100 version.