2SCR513PHZGT100

Single Bipolar Transistors Overview

The 2SCR513PHZGT100 is an NPN silicon bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It is housed in a surface-mount SOT-89-3 package, also designated as MPT3 or TO-243. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 1 A. Power dissipation is rated at 0.5 W. The DC current gain (hFE) ranges from 180 to 450. It operates within a storage temperature range of -55°C to +150°C and meets the AEC-Q101 automotive grade standard.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• High-speed switching capability suitable for low-frequency amplification
• Automotive-grade reliability certified under AEC-Q101 standards

Single Bipolar Transistors Applications

• Gate driver circuits
• Low-frequency amplifier applications
• Automotive electronic systems requiring high reliability

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape specifications. Confirm that the required hFE binning matches the design requirements, as gain varies across the specified range. Check for any pending Product Change Notices (PCN) regarding package dimensions or material composition updates before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a compact SOT-89 footprint is required for medium-power NPN switching applications. It is appropriate for designs needing moderate voltage handling with high current gain. Ensure thermal management strategies account for the 0.5 W power dissipation limit in the chosen enclosure environment.

Single Bipolar Transistors Part Context

This part belongs to ROHM's 2SCR series of NPN mid-power transistors designed for robust operation in demanding environments. The series emphasizes low saturation voltage and fast switching speeds, making it distinct from general-purpose small-signal transistors. It is engineered specifically to meet the stringent quality and longevity requirements of the automotive industry.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other AEC-Q101 qualified NPN transistors in SOT-89 packages with similar VCEO and Ic ratings. Verify pinout compatibility and thermal resistance characteristics before substitution.