Single Bipolar Transistors 2SCR544P5T100 product image

2SCR544P5T100

$0.75
  • Description:TRANS NPN 80V 2.5A MPT3
  • Series:-

SKU:ee87b91118bb Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SCR544P5T100 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 2.5A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR544P5T100

  • Description:TRANS NPN 80V 2.5A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2.5 A
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 3V
  • Power - Max:500 mW
  • Frequency - Transition:280MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SCR544P5T100

2SCR544P5T100

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR544P5T100 is a single NPN silicon bipolar junction transistor (BJT) housed in an SOT-89-3 surface-mount package. It supports a maximum collector current of 2.5 A and withstands collector-emitter voltages up to 80 V. The device features a gain-bandwidth product of 280 MHz and a power dissipation rating of 500 mW. Key electrical parameters include a DC current gain ranging from 120 to 390 at 100 mA, a collector-emitter saturation voltage of 300 mV, and a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • Single NPN configuration for discrete switching and amplification applications
  • High thermal stability with a maximum junction temperature of +150°C
  • Optimized for mid-power operations within a compact SMD footprint

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages requiring moderate current handling
  • Automotive electronic modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix P5T100 against official datasheets to confirm the SOT-89-3 package and 500 mW power rating. Confirm RoHS compliance status through manufacturer documentation. Ensure compatibility with standard SMT reflow profiles. Check for end-of-life notices or design-winner status before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with 80 V breakdown and 2.5 A continuous current capability is required in a small outline package. The 280 MHz transition frequency suits high-speed switching needs. Compare power dissipation limits against thermal management capabilities. Consider the hFE range for biasing requirements in amplifier designs.

Single Bipolar Transistors Part Context

This part belongs to the 2SxR series of bipolar transistors manufactured by ROHM Semiconductor. It is designed for surface-mount technology integration. The device utilizes silicon planar technology. It serves as a discrete solution for power control tasks where space constraints limit the use of larger packages like TO-220.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

2SCR544P5T1002SCR544P5T100
$0.75
Buy Now