2SCR552PT100

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR552PT100 is a single NPN bipolar junction transistor (BJT) designed for middle power applications. It utilizes silicon technology and is housed in an SOT-89-3 (MPT3) surface-mount package. The device supports a maximum collector current of 3 A and a collector-emitter voltage of 30 V. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 500 at 500 mA, a transition frequency (fT) of 280 MHz, and a power dissipation rating of 2 W. The component operates within a temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain capability for efficient signal amplification
• Robust thermal performance with high maximum junction temperature rating
• Suitable for high-frequency switching operations due to specified transition frequency

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications in consumer electronics
• Driver stages for medium-power loads

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official ROHM documentation to confirm packaging type and tape-and-reel specifications. Ensure the ordering part number matches the required quantity per reel. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN BJT with 3 A continuous collector current and 30 V breakdown voltage is required. The MPT3 package offers a balance between power handling and compact footprint. Consider the hFE range and fT specifications to ensure compatibility with the target circuit's gain and frequency requirements.

Single Bipolar Transistors Part Context

This component belongs to the ROHM 2SCR series of NPN bipolar transistors. These devices are engineered for general-purpose use in various electronic systems. The series provides standardized pinouts and electrical characteristics to facilitate design-in processes across multiple product lines.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material.