Single Bipolar Transistors 2SCR553P5T100 product image

2SCR553P5T100

$0.61
  • Description:TRANS NPN 50V 2A MPT3
  • Series:-

SKU:d3b17b0655c4 Category: Brand:

  
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2SCR553P5T100 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 2A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR553P5T100

  • Description:TRANS NPN 50V 2A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:350mV @ 35mA, 700mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 50mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:360MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SCR553P5T100

2SCR553P5T100

Single Bipolar Transistors Overview

The 2SCR553P5T100 is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 2 A. The device is housed in an MPT3 surface-mount package, equivalent to TO-243AA. Key electrical parameters include a maximum power dissipation of 2 W, a transition frequency (fT) of 360 MHz, and a DC current gain (hFE) ranging from 180 to 450 at 50 mA and 2 V. The saturation voltage is specified at 350 mV under specific test conditions.

Single Bipolar Transistors Feature Summary

  • Designed for middle-power applications with low collector-emitter saturation voltage.
  • Suitable for use as a driver transistor in switching and amplification circuits.
  • Constructed using silicon technology for reliable high-temperature operation.

Single Bipolar Transistors Applications

  • Driver transistors in electronic control units
  • Low-frequency amplifier circuits
  • High-speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the component status before integration, as availability may vary. Confirm that the MPT3 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the 2 W power dissipation rating under expected operating loads. Cross-reference the specific suffix to confirm tape-and-reel packaging requirements for automated assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when a 50 V NPN transistor with 2 A current capacity is required in a compact SMD form factor. Consider the 360 MHz transition frequency for signal integrity in moderate-speed switching environments. Evaluate the hFE range of 180 to 450 to ensure adequate base drive capability for the intended load. Compare against complementary PNP devices if push-pull configurations are necessary for the design.

Single Bipolar Transistors Part Context

This part belongs to the 2SCR series of NPN bipolar junction transistors from ROHM Semiconductor. The series includes variants with different voltage and current ratings, such as the 2SCR533 and 2SCR293. The 2SCR553P5T100 specifically targets automotive and industrial middle-power applications requiring robust performance in a small outline package.

Single Bipolar Transistors Replacement Considerations

The 2SCR553P5T100 has a similar level replacement in the 2SCR553P5T100 variant, which shares the same pinout and package. Verify compatibility with other NPN transistors offering 50 V and 2 A ratings if supply constraints exist.

2SCR553P5T1002SCR553P5T100
$0.61
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