Single Bipolar Transistors 2SCR554PHZGT100 product image

2SCR554PHZGT100

$0.92
  • Description:TRANS NPN 80V 1.5A SOT-89
  • Series:-

SKU:f18551349471 Category: Brand:

  
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2SCR554PHZGT100 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 1.5A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR554PHZGT100

  • Description:TRANS NPN 80V 1.5A SOT-89
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 25mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 3V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for 2SCR554PHZGT100

2SCR554PHZGT100

Single Bipolar Transistors Overview

The 2SCR554PHZGT100 is a silicon NPN bipolar junction transistor (BJT) designed for low-frequency amplification and driver applications. It features an 80 V collector-emitter voltage rating and supports a continuous collector current of 1.5 A. The device offers a DC current gain (hFE) ranging from 120 to 390 at 100 mA and 3 V, with a transition frequency (fT) of 300 MHz. Packaged in the SOT-89 (TO-243AA) surface-mount format, it provides a power dissipation capacity of 0.5 W. The component complies with AEC-Q101 automotive standards and operates within a junction temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage design optimized for efficient driver performance
  • Automotive-grade reliability certified under AEC-Q101 standards
  • High-speed switching capability supported by 300 MHz transition frequency

Single Bipolar Transistors Applications

  • General-purpose low-frequency amplification circuits
  • Driver transistors in automotive electronic systems
  • Switching applications requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration, as the base part number may correspond to different tape-and-reel quantities. Confirm RoHS compliance status and REACH SVHC declarations against the latest manufacturer documentation prior to integration. Ensure that the selected variant matches the required storage and operating temperature specifications for the target environment.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V breakdown and 1.5 A current capacity is required in a compact SOT-89 package. Consider the 0.5 W power dissipation limit and thermal management requirements for the application. Verify that the hFE range of 120–390 meets the gain requirements for the intended amplifier or switch circuit design.

Single Bipolar Transistors Part Context

This device belongs to ROHM Semiconductor's series of middle-power driver transistors. It shares similar electrical characteristics with other members of the family but is distinguished by its specific voltage and current ratings. The SOT-89 package provides a balance between power handling and board space efficiency, suitable for dense surface-mount layouts.

Single Bipolar Transistors Replacement Considerations

The 2SCR554PFRAT100 is documented as a substitute with identical pinout and package dimensions. Verify functional equivalence regarding electrical parameters before implementation.

2SCR554PHZGT1002SCR554PHZGT100
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