2SCR564F3TR

Single Bipolar Transistors Overview

The 2SCR564F3TR is an NPN medium-power transistor designed for low-frequency amplification applications. It features a low collector-emitter saturation voltage of -360mV maximum at specified currents and supports a continuous collector current of -4A with a peak current of -8A. The device operates with a collector-emitter voltage of -80V and utilizes the HUML2020L3 (DFN2020-3S) leadless surface-mount package, which provides excellent thermal and electrical conductivity in a compact 2.0x2.0mm footprint.

Single Bipolar Transistors Feature Summary

• Low V CE(sat) characteristic suitable for efficient power driving
• High collector current capability for medium-power driver applications
• Leadless small SMD package with superior thermal and electrical conductivity

Single Bipolar Transistors Applications

• Low-frequency amplification circuits
• Medium-power driver stages
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the exact part number against official ROHM documentation, as the provided input model differs from the verified datasheet entry. Confirm RoHS compliance status and long-term supply availability directly with the manufacturer or authorized distributors before procurement. Ensure the ordering suffix matches the required tape-and-reel packaging configuration.

Single Bipolar Transistors Selection Notes

Select this component when a compact surface-mount solution with high current handling and low saturation voltage is required. The DFN2020-3S package offers a balance between thermal performance and board space efficiency. Consider the -80V rating and -4A continuous current limits to ensure adequate headroom for the specific circuit design requirements.

Single Bipolar Transistors Part Context

This component belongs to the ROHM medium-power transistor family, specifically engineered for applications requiring robust current handling in small form factors. The HUML2020L3 package is designed to maximize heat dissipation while minimizing the PCB area occupied by the device, making it suitable for dense electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Direct substitutes are not explicitly confirmed in the provided source material. Verify compatibility with alternative PNP or NPN transistors in the same voltage and current class by comparing pin configurations, thermal resistance, and saturation characteristics.