2SCR572D3TL1

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR572D3TL1 is a single NPN bipolar junction transistor (BJT) designed for power driver applications. It features a collector-emitter voltage (VCEO) of 30 V and a continuous collector current (Ic) of 5 A. The device offers a maximum power dissipation (Pd) of 10 W and a transition frequency (fT) of 300 MHz. Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) of 400 mV at Ic/Ib = 2A/100mA, and a DC current gain (hFE) ranging from 200 to 500 at -500 mA/-3 V. It operates within a junction temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage (VCEsat) of 400 mV max for efficient power switching.
• High DC current gain (hFE) ranging from 200 to 500 for effective amplification.
• Suitable for low-frequency amplifier and power driver circuits.
• Automotive grade qualification compliant with AEC-Q101 standards.

Single Bipolar Transistors Applications

• Power driver circuits
• Low-frequency amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL1 against the official ROHM datasheet to confirm package type and taping specifications. Ensure the design accounts for the TO-252 thermal requirements given the 10 W power dissipation rating. Confirm AEC-Q101 compliance if automotive usage is intended, as standard variants may differ. Cross-reference pinouts with the SC-63/JEITA package dimensions for PCB layout accuracy.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a 30 V, 5 A NPN power transistor with high current gain. The low VCEsat minimizes conduction losses in switching applications. Compare against complementary PNP types like the 2SAR572D3 for push-pull configurations. Consider the 300 MHz fT for bandwidth limitations in signal processing tasks.

Single Bipolar Transistors Part Context

This part belongs to the 2SCR572 series of power transistors manufactured by ROHM Semiconductor. It is housed in a surface-mount TO-252 (DPAK/SC-63) package. The series is characterized by low saturation voltage and high reliability, making it suitable for robust industrial and automotive electronic systems requiring efficient power handling.

Single Bipolar Transistors Replacement Considerations

The 2SCR572D3FRATL is listed as a substitute part number for this component family. Verify pin compatibility and exact electrical tolerances before substitution.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum VCEsat is 400 mV when measured at a collector current of 2 A and a base current of 100 mA.

Is this transistor qualified for automotive applications?

Yes, the 2SCR572D3TL1 is qualified under the AEC-Q101 standard for automotive grade components.

What is the recommended complementary PNP transistor?

The 2SAR572D3 is the specified complementary PNP type for this NPN transistor.