Single Bipolar Transistors 2SCR586JGTLL product image

2SCR586JGTLL

$2.25
  • Description:TRANS NPN 80V 5A TO-263AB
  • Series:-

SKU:faaaa1cc819b Category: Brand:

  
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2SCR586JGTLL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 5A TO-263AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR586JGTLL

  • Description:TRANS NPN 80V 5A TO-263AB
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 100mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 3V
  • Power - Max:40 W
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for 2SCR586JGTLL

2SCR586JGTLL

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR586JGTLL is a single NPN silicon bipolar junction transistor housed in a TO-263AB-3 surface-mount package. It supports a collector current of 5 A and a collector-emitter voltage of 80 V, with a power dissipation rating of 10 W. The device features a low saturation voltage of 300 mV at IC/IB=2A/100mA and a DC current gain (hFE) ranging from 120 to 390 at 500 mA. Its transition frequency is 200 MHz, and it operates within a temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient power switching
  • High DC current gain for effective driver applications
  • Robust thermal performance suitable for high-power dissipation

Single Bipolar Transistors Applications

  • Power driver circuits
  • Low-frequency amplification
  • General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix JGTLL against the manufacturer's datasheet to confirm the exact tape-and-reel packaging configuration. Ensure that the component status aligns with design requirements, as some variants may be designated for existing customers only. Cross-reference the RoHS compliance details provided in the official documentation before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN transistor with low saturation voltage is required in a TO-263AB package. Compare the 10 W power dissipation capability against the application's thermal management constraints. Verify that the 80 V breakdown voltage meets the circuit's maximum operating conditions and that the hFE range suits the drive requirements.

Single Bipolar Transistors Part Context

This part belongs to the ROHM 2SCR series of NPN power transistors designed for automotive and industrial use. It complements the PNP counterpart 2SAR586JGTLL in push-pull configurations. The TO-263AB package provides a balance between high power handling and surface-mount convenience, distinguishing it from smaller signal transistors or larger through-hole packages.

Single Bipolar Transistors Replacement Considerations

The 2SCR586D3FRA is a recommended alternative with similar electrical characteristics but housed in a TO-252 package. Verify pinout compatibility and thermal resistance differences when substituting. Other members of the 2SCR family may offer different voltage or current ratings.

2SCR586JGTLL2SCR586JGTLL
$2.25
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