2SCR587D3TL1

$1.79

Description：TRANS NPN 120V 3A TO-252
Series：-

SKU:a9c99ef64d20 Category: Single Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

2SCR587D3TL1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 120V 3A TO-252. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR587D3TL1

Description：TRANS NPN 120V 3A TO-252
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：120mV @ 100mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 100mA, 5V
Power - Max：10 W
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SCR587D3TL1

2SCR587D3TL1

Single Bipolar Transistors Overview

The 2SCR587D3TL1 is an NPN silicon epitaxial planar power transistor manufactured by ROHM Semiconductor. It utilizes a surface-mount TO-252 (DPAK) package with three terminals, designated as JEITA SC-63. The device supports a collector-emitter voltage of 120 V and a continuous collector current of 3 A. Maximum power dissipation is rated at 10 W. The DC current gain (hFE) ranges from 120 to 390. Operating temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

Designed for low saturation voltage applications to enhance efficiency in driver circuits.
Suitable for use in low-frequency amplification stages requiring robust power handling.
Complements the 2SAR587D3 PNP type for push-pull or complementary configurations.

Single Bipolar Transistors Applications

Power driver circuits
Low-frequency amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TL1 against the required reel quantity and tape specifications. Confirm RoHS compliance status and ensure the component meets automotive grade requirements if applicable, as standard versions may differ from qualified automotive variants like the FRA series. Check supply status for new design recommendations.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current capacity is required. Ensure the thermal management solution supports 10 W dissipation in the TO-252 package. Verify that the hFE range of 120 to 390 aligns with the base drive requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to ROHM's line of low VCE(sat) power transistors. It is often paired with its complementary PNP counterpart, the 2SAR587D3, to form complete driver pairs. The family emphasizes reduced saturation voltage to minimize power loss during switching or linear operation.

Single Bipolar Transistors Replacement Considerations

The 2SCR587D3 is listed as a similar level alternative with the same package. Verify electrical parameters and marking codes before substitution.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum VCE(sat) is 120 mV when measured at IC/IB = 1A/100mA.

Is this component suitable for automotive applications?

The standard 2SCR587D3TL1 is not explicitly designated for automotive use; the 2SCR587D3FRA variant is specified for automotive equipment under AEC-Q101 standards.