2SD0602ARL

Single Bipolar Transistors Overview

The Panasonic 2SD0602A is a silicon NPN epitaxial planar transistor designed for general amplification. It features a Mini3-G1 package with low collector-emitter saturation voltage. Key electrical ratings include a collector-base voltage of 60 V, collector-emitter voltage of 50 V, and emitter-base voltage of 5 V. The maximum continuous collector current is 500 mA, with a peak current of 1 A. Collector power dissipation is rated at 200 mW. The transition frequency reaches 200 MHz, and the forward current transfer ratio ranges from 85 to 340 depending on the rank.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• Miniature package design enabling equipment downsizing
• Compatible with automatic insertion via tape packing

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify component status as maintenance or discontinued through official Panasonic channels before procurement. Confirm specific hFE rank requirements (Q, R, S) against circuit needs. Ensure compliance with RoHS directives. Check latest specifications directly from the manufacturer to account for potential updates or lifecycle changes prior to final design commitment.

Single Bipolar Transistors Selection Notes

Select based on required hFE gain range and saturation voltage characteristics. The device supports a maximum collector current of 500 mA and operates up to 150°C junction temperature. Consider the Mini3-G1 package dimensions for PCB layout constraints. Verify thermal management capabilities given the 200 mW power dissipation limit under specified ambient conditions.

Single Bipolar Transistors Part Context

This NPN transistor serves as the complementary pair to the 2SB0710A PNP type. It belongs to Panasonic's lineup of small-signal transistors intended for standard electronic applications. The component utilizes an epitaxial planar structure for reliable performance in general-purpose amplification tasks within consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical parameters such as VCEO, IC, and hFE ranks when evaluating alternatives. Ensure package compatibility and pinout alignment if considering third-party replacements.

Single Bipolar Transistors FAQ

What is the complementary PNP transistor for the 2SD0602A?

The complementary transistor is the 2SB0710A.

How is the hFE gain classified?

The forward current transfer ratio is classified into ranks Q, R, S, and No-rank based on specific gain ranges measured under defined conditions.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.