Single Bipolar Transistors 2SD0814ASL product image

2SD0814ASL

  • Description:TRANS NPN 185V 0.05A MINI3-G1
  • Series:-

SKU:382f6457ec2c Category: Brand:

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2SD0814ASL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 185V 0.05A MINI3-G1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD0814ASL

  • Description:TRANS NPN 185V 0.05A MINI3-G1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):185 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 3mA, 30mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:185 @ 10mA, 5V
  • Power - Max:200 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:Mini3-G1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD0814ASL

2SD0814ASL

Single Bipolar Transistors Overview

The Panasonic 2SD0814ASL is a silicon NPN epitaxial planar transistor designed for high breakdown voltage low-frequency and low-noise amplification. It features a collector-emitter voltage of 185 V, a collector current of 50 mA, and a collector power dissipation of 200 mW. The device exhibits a transition frequency of 150 MHz and a noise voltage of 150 mV under standard test conditions.

Single Bipolar Transistors Feature Summary

  • High collector-emitter voltage rating suitable for demanding circuit environments
  • Low noise voltage characteristics optimized for sensitive signal amplification
  • Miniature package design facilitating equipment downsizing and automated insertion

Single Bipolar Transistors Applications

  • Low-frequency amplification circuits
  • Low-noise amplifier designs
  • General electronic equipment requiring high breakdown voltage

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'SL' against official documentation to confirm tape packing specifications. Confirm current lifecycle status as maintenance or discontinued via manufacturer channels before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when high collector-emitter voltage and low noise performance are required in a compact form factor. Ensure the 200 mW power dissipation limit aligns with the thermal management capabilities of the target application environment.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD0814A series of small signal bipolar transistors. It utilizes an SC-59 (Mini3-G1) package configuration. The device is manufactured using silicon epitaxial planar technology to ensure stable electrical characteristics across operating temperatures.

Single Bipolar Transistors Replacement Considerations

Consult official replacement lists for verified substitutes. Cross-reference absolute maximum ratings and pin configurations carefully if considering alternative manufacturers.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (Emitter open) is rated at 185 V.

Does the device support automatic insertion during manufacturing?

Yes, the mini type package allows for automatic insertion through tape packing and magazine packing.

What is the typical forward current transfer ratio range?

The forward current transfer ratio (hFE) ranges from 90 to 330 depending on the specific rank classification.

2SD0814ASL2SD0814ASL

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