2SD09650RA

Single Bipolar Transistors Overview

The Panasonic 2SD0965RA is a silicon NPN epitaxial planar transistor designed for low-frequency power amplification and stroboscope applications. It features a TO-92-B1 package with a collector-emitter voltage (VCEO) of 20 V, a continuous collector current (IC) of 5 A, and peak collector current (ICP) of 8 A. The device offers a forward current transfer ratio (hFE) ranging from 150 to 600 depending on the rank, and a maximum collector power dissipation (PC) of 750 mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for high efficiency
• Satisfactory operation performance with low-voltage power supplies

Single Bipolar Transistors Applications

• Low-frequency power amplification
• Stroboscope circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank required for your design, as the datasheet defines Rank Q (230 to 380) and Rank R (340 to 600). Confirm the exact ordering suffix matches the desired gain classification. Check the manufacturer's official lifecycle status page for current availability, as this component may be subject to maintenance or discontinuation plans.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor capable of handling up to 5 A continuous current is needed in a compact through-hole package. Ensure the application operates within the 20 V collector-emitter limit and that thermal management can maintain junction temperatures below 150°C. Consider the transition frequency of 150 MHz if signal speed is a factor.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD0965 series of silicon NPN transistors. It utilizes an epitaxial planar construction housed in a TO-92-B1 plastic package. The device is compliant with the RoHS Directive (EU 2002/95/EC) and is intended for standard electronic equipment applications such as household appliances and measuring instruments.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's official replacement guide for verified substitutes. Cross-referencing requires matching the TO-92-B1 package, 20 V VCEO rating, and 5 A IC capability to ensure functional compatibility without redesigning the circuit board.

Single Bipolar Transistors FAQ

What are the available hFE ranks for the 2SD0965?

The datasheet specifies two gain ranks: Rank Q with an hFE range of 230 to 380, and Rank R with an hFE range of 340 to 600.

What is the maximum collector power dissipation?

The maximum collector power dissipation (PC) is rated at 750 mW at an ambient temperature of 25°C.

Is this transistor suitable for high-frequency switching?

No, it is designed for low-frequency power amplification. Its transition frequency (fT) is specified at 150 MHz, which limits its effectiveness in very high-speed switching applications.