2SD1005-W-TP

Single Bipolar Transistors Overview

The MCC 2SD1005-W-TP is an NPN silicon power transistor housed in a SOT-89 surface-mount package. It features a collector-emitter voltage of 80 V and a continuous collector current rating of 1.0 A, with a maximum power dissipation of 0.5 W. The device exhibits excellent DC current gain linearity and high breakdown voltage characteristics. Electrical specifications include a minimum hFE of 90 at 0.1 A, a transition frequency of 160 MHz, and a collector cutoff current of 0.1 µA. The component operates within a junction temperature range of -55 to +150 °C.

Single Bipolar Transistors Feature Summary

• Excellent DC current gain linearity for stable amplification performance
• High breakdown voltage capability suitable for robust switching applications
• Surface-mount SOT-89 packaging optimized for automated assembly

Single Bipolar Transistors Applications

• Power amplifier stages requiring linear gain characteristics
• General-purpose switching circuits
• Output driver stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The standard part number includes a tape-and-reel packing format containing 1000 pieces per reel. Confirm that the selected variant matches the required hFE binning rank for the intended circuit design. Ensure sourcing from authorized distributors to guarantee genuine components and full traceability as mandated by manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this component when a compact SOT-89 footprint is required for NPN power switching or amplification. The W ranking indicates a DC current transfer ratio range of 90 to 180, which suits applications needing moderate gain consistency. Consider the thermal resistance of 250 °C/W when designing heat dissipation strategies for the plastic encapsulated device.

Single Bipolar Transistors Part Context

This transistor belongs to the Micro Commercial Components 2SD1005 series of NPN silicon power transistors. The series is characterized by epitaxial planar construction designed for linear amplifier and switching uses. The specific model utilizes the SOT-89 outline, distinguishing it from through-hole variants like TO-92 or larger power packages found in other product lines.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the NPN polarity, SOT-89 package, and electrical ratings of 80 V VCEO and 1.0 A IC. Verify pinout compatibility and thermal resistance values before implementation.

Single Bipolar Transistors FAQ

What is the DC current gain range for the W ranking?

The W ranking specifies a minimum hFE of 90 and a maximum of 180 when measured at a collector current of 0.1 A.

Is the component halogen-free?

Standard versions are not explicitly stated as halogen-free; the -HF suffix must be added to the part number to request halogen-free material composition.

What is the maximum junction temperature?

The maximum operating junction temperature is rated at +150 °C.