2SD1047

Single Bipolar Transistors Overview

The 2SD1047 is a high-power NPN epitaxial planar bipolar transistor manufactured by STMicroelectronics using BiT-LA technology. It features a collector-emitter breakdown voltage of 140 V and a continuous collector current rating of 12 A. The device exhibits a typical transition frequency of 20 MHz and a maximum power dissipation of 100 W. Key electrical parameters include a DC current gain (hFE) of 60 at 1 A and 5 V, a collector-base voltage of 200 V, and an emitter-base voltage of 6 V. It operates within a temperature range of -65 °C to +150 °C and is housed in a TO-3P through-hole package.

Single Bipolar Transistors Feature Summary

• Utilizes BiT-LA technology for improved gain linearity
• High breakdown voltage capability of 140 V
• Fully characterized performance at elevated temperatures up to 125 °C

Single Bipolar Transistors Applications

• Linear amplifier circuits
• Power switching applications
• Audio output stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer marking and datasheet revision when sourcing this component, as availability status may vary across regions. Confirm that the received units match the TO-3P package dimensions and pinout configuration required for your design. Ensure compliance with RoHS directives if lead-free variants are specified for your assembly process.

Single Bipolar Transistors Selection Notes

Select the 2SD1047 for designs requiring robust NPN power handling with moderate frequency response. Its high voltage rating suits applications where supply voltages approach or exceed 100 V. Consider its thermal characteristics and the need for adequate heatsinking given the 100 W dissipation rating in the TO-3P package.

Single Bipolar Transistors Part Context

This component belongs to STMicroelectronics' portfolio of high-voltage bipolar transistors. It is designed for linear amplifier applications, leveraging BiT-LA technology to ensure stable performance. The device serves as a discrete solution for power amplification tasks where integrated circuits may lack sufficient voltage or current capacity.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.