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2SD1060S-1E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 5A TO-220-3. Review the specifications below when checking this part for your BOM.
The onsemi 2SD1060S-1E is a silicon NPN bipolar junction transistor designed for through-hole mounting in TO-220AB-3 packages. It supports a maximum DC collector current of 5 A and a collector-emitter voltage (VCEO) of 50 V, with a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 6 V. The device features a low collector-emitter saturation voltage of 300 mV and a power dissipation rating of 1.75 W. Its transition frequency (fT) is specified at 30 MHz, and it operates within a temperature range up to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging configurations. Ensure that the procurement channel provides valid traceability records and compliance certificates matching the component's RoHS and REACH status requirements.
Select this component when a through-hole NPN transistor with 5 A continuous current capability and 50 V breakdown voltage is required. Consider the 1.75 W power dissipation limit and thermal management needs relative to the application environment. Verify compatibility with the target PCB footprint for the TO-220AB-3 package.
This part belongs to the 2SD1060 series of bipolar transistors manufactured by onsemi. The series is characterized by silicon technology and is intended for use in standard electronic assemblies where reliable switching performance and moderate power handling are necessary for system functionality.
Cross-reference with other 2SD1060 variants or equivalent NPN transistors from different manufacturers only if their absolute maximum ratings and pin configurations match exactly. Confirm package compatibility before substitution.
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