2SD1138-C-BP

Single Bipolar Transistors Overview

The MCC 2SD1138-C-BP is an NPN silicon power transistor designed for low-frequency power amplifier applications, specifically color TV vertical deflection output circuits. It operates within a collector-emitter voltage range of 150 V and supports a continuous collector current of 2 A. The device dissipates up to 1.8 W of power and features a TO-220 package. The 'C' suffix indicates a forward current transfer ratio (hFE) classification ranging from 100 to 200.

Single Bipolar Transistors Feature Summary

• Engineered for low-frequency power amplification in television vertical deflection systems
• Utilizes NPN silicon epitaxial construction with a TO-220 plastic encapsulation
• Features epoxy meeting UL 94 V-0 flammability rating and lead-free finish

Single Bipolar Transistors Applications

• Color TV vertical deflection output stages
• Low-frequency power amplifier circuits
• General-purpose switching applications requiring high voltage tolerance

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin by confirming the part suffix; the 'C' designation corresponds to a gain range of 100 to 200. Ensure the '-BP' suffix matches the required bulk packaging format. Confirm RoHS compliance status if halogen-free requirements are necessary, as this requires a distinct ordering suffix. Validate authenticity through authorized distributors to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN power transistor with a minimum 150 V collector-emitter breakdown voltage. The 2 A current capacity and 1.8 W power dissipation make it suitable for vertical deflection drivers. Verify that the TO-220 package dimensions align with the thermal management strategy and PCB layout constraints of the target application.

Single Bipolar Transistors Part Context

This component belongs to the Micro Commercial Components discrete semiconductor product line, categorized under bipolar junction transistors. It is manufactured using silicon technology and is intended for industrial and commercial power supply applications. The device is packaged in a standard TO-220 form factor, facilitating through-hole mounting on printed circuit boards.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the NPN configuration, 150 V minimum VCEO, and TO-220 package. Verify equivalent hFE ranges and power dissipation capabilities before implementation.