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2SD1207T-AE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 2A TO92. Review the specifications below when checking this part for your BOM.
The onsemi 2SD1207T-AE is an NPN single bipolar transistor housed in a TO-92 (MP) package. It features a collector-emitter voltage of 50 V and a continuous collector current capacity of 2 A, with a peak pulse rating of 4 A. The device exhibits low saturation voltage characteristics, specifically a maximum VCE(sat) of 0.4 V at IC=1A and IB=50mA. DC current gain ranges from 140 to 400 depending on the specific rank, with a gain-bandwidth product of 150 MHz.
Verify that the ordering suffix matches the required shipping configuration. The -AE suffix indicates a box quantity of 1,000 pieces, whereas non-AE variants are supplied in bags of 500. Confirm the specific hFE rank (S or T) if precise gain thresholds are necessary for the design. Ensure compliance with RoHS standards as indicated by the Pb Free marking.
Select this component when a robust NPN transistor with high current handling is required for switching applications. The wide SOA and low saturation voltage make it suitable for driving loads such as relays and lamps efficiently. Consider the specific hFE rank requirements during selection to ensure adequate base drive margins are met under varying load conditions.
This part belongs to the 2SD1207 series of NPN transistors manufactured by onsemi. It is functionally equivalent to the standard 2SD1207 but differs in packaging and shipping quantities. The device is designed for general-purpose switching applications requiring reliable performance in power supplies and automotive environments.
Public confirmed substitute part numbers: None identified in verified documentation.
The primary difference lies in the shipping quantity. The 2SD1207T is typically supplied in bags of 500 pieces, while the 2SD1207T-AE is supplied in boxes containing 1,000 pieces.
The device is graded into two hFE ranks at IC=100mA: Rank S (140 to 280) and Rank T (200 to 400).
The maximum collector dissipation (PC) is rated at 1 W at an ambient temperature of 25°C.
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