Single Bipolar Transistors 2SD1207T-AE product image

2SD1207T-AE

$0.16
  • Description:TRANS NPN 50V 2A TO92
  • Series:-

SKU:9766a6aa0995 Category: Brand:

  
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2SD1207T-AE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 2A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1207T-AE

  • Description:TRANS NPN 50V 2A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for 2SD1207T-AE

2SD1207T-AE

Single Bipolar Transistors Overview

The onsemi 2SD1207T-AE is an NPN single bipolar transistor housed in a TO-92 (MP) package. It features a collector-emitter voltage of 50 V and a continuous collector current capacity of 2 A, with a peak pulse rating of 4 A. The device exhibits low saturation voltage characteristics, specifically a maximum VCE(sat) of 0.4 V at IC=1A and IB=50mA. DC current gain ranges from 140 to 400 depending on the specific rank, with a gain-bandwidth product of 150 MHz.

Single Bipolar Transistors Feature Summary

  • Utilizes FBET and MBIT processing technologies for optimized performance
  • Provides large current capacity combined with a wide Safe Operating Area (SOA)
  • Designed for low saturation voltage operation to minimize power loss

Single Bipolar Transistors Applications

  • Power supply circuits
  • Relay drivers
  • Lamp drivers
  • Automotive wiring systems

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required shipping configuration. The -AE suffix indicates a box quantity of 1,000 pieces, whereas non-AE variants are supplied in bags of 500. Confirm the specific hFE rank (S or T) if precise gain thresholds are necessary for the design. Ensure compliance with RoHS standards as indicated by the Pb Free marking.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with high current handling is required for switching applications. The wide SOA and low saturation voltage make it suitable for driving loads such as relays and lamps efficiently. Consider the specific hFE rank requirements during selection to ensure adequate base drive margins are met under varying load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1207 series of NPN transistors manufactured by onsemi. It is functionally equivalent to the standard 2SD1207 but differs in packaging and shipping quantities. The device is designed for general-purpose switching applications requiring reliable performance in power supplies and automotive environments.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: None identified in verified documentation.

Single Bipolar Transistors FAQ

What is the difference between the 2SD1207T and 2SD1207T-AE?

The primary difference lies in the shipping quantity. The 2SD1207T is typically supplied in bags of 500 pieces, while the 2SD1207T-AE is supplied in boxes containing 1,000 pieces.

What are the hFE ranks available for this device?

The device is graded into two hFE ranks at IC=100mA: Rank S (140 to 280) and Rank T (200 to 400).

What is the maximum collector dissipation?

The maximum collector dissipation (PC) is rated at 1 W at an ambient temperature of 25°C.

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