2SD1207T

Single Bipolar Transistors Overview

The onsemi 2SD1207T is an NPN single bipolar transistor housed in a TO-92 (MP) package. It features a collector-emitter voltage of 50 V and a continuous collector current rating of 2 A, with a pulse current capacity of 4 A. The device exhibits low saturation voltage characteristics, specifically a maximum VCE(sat) of 0.4 V at IC=1A and IB=50mA. Electrical performance includes a DC current gain (hFE) ranging from 140 to 400 depending on the grading rank, and a gain-bandwidth product of 150 MHz.

Single Bipolar Transistors Feature Summary

• Utilizes FBET and MBIT processing technologies for optimized switching performance
• Provides large current capacity combined with a wide Safe Operating Area (SOA)
• Engineered for low collector-to-emitter saturation voltage to minimize power loss

Single Bipolar Transistors Applications

• Power supply circuits
• Relay drivers
• Lamp drivers
• Automotive wiring systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The 'T' suffix indicates a bag shipping format containing 500 pieces per unit. Confirm that the required hFE rank aligns with the application's gain requirements, as the device is graded into distinct ranges based on DC current gain measurements at specified test conditions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust NPN switching capabilities within a compact TO-92 form factor. Ensure the design accounts for the 1 W collector dissipation limit and the 150 °C junction temperature threshold. Verify that the required current gain falls within the available S or T ranks defined in the datasheet specifications.

Single Bipolar Transistors Part Context

This device belongs to the 2SD1207 series of large-current switching transistors manufactured by onsemi. It serves as a complement to PNP counterparts like the 2SB892. The series is designed for general-purpose high-current switching tasks, offering a balance of speed and drive capability suitable for embedded control and power management interfaces.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SD1207S variant, which shares identical electrical characteristics but differs in packaging quantity. Cross-reference with other manufacturers' TO-92 NPN transistors rated for 50V and 2A if pinout compatibility is maintained.

Single Bipolar Transistors FAQ

What are the available hFE grading ranks for the 2SD1207?

The device is graded into Rank S (hFE 140 to 280) and Rank T (hFE 200 to 400) based on measurements taken at VCE=2V and IC=100mA.

What is the maximum pulse collector current?

The absolute maximum rating for pulse collector current (ICP) is 4 A.