2SD1223,L1XGQ(O

Description：TRANSISTOR NPN DARL PWMOLD
Series：*

SKU:70517328b35d Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SD1223,L1XGQ(O is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANSISTOR NPN DARL PWMOLD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1223,L1XGQ(O

Description：TRANSISTOR NPN DARL PWMOLD
Series：*
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD1223,L1XGQ(O

2SD1223,L1XGQ(O

Single Bipolar Transistors Overview

The 2SD1223 is a silicon NPN epitaxial planar transistor manufactured using Toshiba's PCT process, configured as a Darlington pair. It provides high DC current gain and low saturation voltage for switching applications. Absolute maximum ratings include a collector-emitter voltage of 80 V, a collector current of 4 A, and collector power dissipation of 15 W at Tc = 25°C. The device operates within a junction temperature range up to 150 °C and features a JEDEC TO-92 (2-7J1A) package.

Single Bipolar Transistors Feature Summary

High DC current gain with a minimum value of 2000 at IC = 1 A
Low collector-emitter saturation voltage of 1.5 V maximum at IC = 3 A
Darlington configuration utilizing PCT process technology

Single Bipolar Transistors Applications

Hammer Drive Applications
Pulse Motor Drive Applications
Power Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as the datasheet indicates environmental compliance varies by marking. Confirm the specific ordering suffix matches the required lead-free specifications. Ensure the component meets all absolute maximum ratings for your specific operating conditions before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are critical requirements. The complementary PNP counterpart is the 2SB908. Consider the thermal derating curves for power dissipation if operating above ambient temperatures. Verify that the 80 V collector-emitter voltage rating aligns with the circuit's peak voltage demands.

Single Bipolar Transistors Part Context

This component belongs to the family of general-purpose bipolar junction transistors designed for medium-power switching and amplification tasks. Manufactured via the PCT process, it offers improved performance characteristics compared to standard diffused types. The TO-92 package facilitates easy integration into through-hole printed circuit board designs.