2SD1230

Single Bipolar Transistors Overview

The onsemi 2SD1230 is a single NPN silicon Darlington bipolar junction transistor designed for power switching applications. It features a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 8A. The device offers a minimum DC current gain (hFE) of 1500 at a collector current of 4A and VCE of 3V. With a maximum power dissipation of 2.5W, it is housed in a TO-3PB through-hole package. The component operates with a transition frequency of 20MHz, making it suitable for medium-frequency power control circuits requiring high gain and robust current handling capabilities.

Single Bipolar Transistors Feature Summary

• High DC current gain capability for efficient base drive requirements
• Darlington configuration providing enhanced amplification in a single package
• Robust 8A collector current rating for substantial load handling
• 100V collector-emitter breakdown voltage ensuring reliable operation in moderate voltage environments

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Medium-power amplifier stages
• Relay driver interfaces
• Motor control logic gates

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer marking and lot code against official onsemi documentation to confirm authenticity. Ensure the TO-3PB package variant matches the required thermal management specifications for the intended application. Cross-reference the datasheet revision date to guarantee compliance with current electrical characteristics and pinout definitions before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN switch is required for currents up to 8A. Consider the 2.5W power dissipation limit and ensure adequate heatsinking or airflow if operating near maximum ratings. The Darlington structure necessitates higher base drive voltage compared to standard transistors; verify that the driving circuit can supply sufficient voltage headroom for saturation.

Single Bipolar Transistors Part Context

The 2SD1230 belongs to the category of discrete power bipolar transistors manufactured by onsemi. It serves as a complement to other devices in similar power ranges within the company's portfolio. As a silicon-based NPN Darlington transistor, it addresses applications needing high current gain without complex multi-stage configurations, fitting into broader industrial and consumer electronics power management solutions.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with potential alternatives by matching key parameters: NPN polarity, Darlington topology, 100V V(BR)CEO, 8A IC, and TO-3PB package dimensions.