2SD12660P

Single Bipolar Transistors Overview

The Panasonic 2SD12660P is a silicon NPN triple diffusion planar power transistor designed for low-frequency power amplification. It features a TO-220F-A1 package with an integrated insulating tab, allowing direct mounting to heat sinks without additional thermal pads. The device supports a collector current of 3A and peak currents up to 5A. Electrical ratings include a collector-emitter voltage of 60V and a collector-base voltage of 60V. The component exhibits high forward current transfer ratio linearity and low saturation voltage.

Single Bipolar Transistors Feature Summary

• Triple diffusion planar construction ensures satisfactory linearity in the forward current transfer ratio (hFE).
• Low collector-emitter saturation voltage (VCE(sat)) reduces power loss during conduction.
• Full-pack design enables secure installation to heat sinks using a single screw.

Single Bipolar Transistors Applications

• Low-frequency power amplification circuits
• General-purpose switching applications
• Standard electronic equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'P' against the official Panasonic datasheet to confirm pinout and packaging variations. Ensure compliance with RoHS Directive (EU 2002/95/EC) requirements if applicable to your manufacturing process. Confirm that the intended application falls within standard general electronic equipment categories, as specialized uses require prior consultation with sales staff.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust power handling in a compact form factor. The TO-220F-A1 package facilitates efficient thermal management through direct heatsink attachment. Consider the hFE rank classification (Q, P, O) based on required gain consistency. Evaluate the transition frequency limits if higher speed operation is anticipated.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1266 series of silicon NPN transistors. It utilizes triple diffusion planar technology optimized for linear performance. The series is engineered for durability in standard electronic environments. The component represents a mature semiconductor solution for established power amplification architectures.

Single Bipolar Transistors Replacement Considerations

Consult Panasonic documentation for verified substitute part numbers. Ensure any replacement maintains identical pinout configuration and thermal resistance characteristics. Verify that alternative components meet or exceed the original absolute maximum ratings for voltage and current.

Single Bipolar Transistors FAQ

What is the maximum collector power dissipation?

The maximum collector power dissipation is 35W when the case temperature is maintained at 25°C.

How is the junction temperature defined?

The maximum junction temperature (Tj) is rated at 150°C.

What are the pin assignments for this transistor?

Pin 1 is Base, Pin 2 is Collector, and Pin 3 is Emitter.