2SD12720P

Single Bipolar Transistors Overview

The Panasonic 2SD1272 is a silicon NPN epitaxial planar power transistor designed for high-speed switching and high current amplification. It features a TO-220F-A1 package with an isolated flange for direct heat sink mounting. The device supports a collector-emitter voltage of 150 V and a continuous collector current of 2.5 A, with a peak collector current rating of 1 A. It offers a minimum forward current transfer ratio (hFE) of 500 at IC = 0.2 A and VCE = 4 V. The transition frequency is specified at 25 MHz under standard test conditions.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio with satisfactory linearity
• Full-pack package design allowing installation to a heat sink with one screw

Single Bipolar Transistors Applications

• High-speed switching circuits
• High current amplification applications
• General electronic equipment such as office and communications equipment

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or P) required for your circuit design, as the datasheet defines two distinct gain ranges. Confirm that the TO-220F-A1 package dimensions match your thermal management and mechanical layout requirements. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Consult official documentation for any updates regarding product lifecycle stages or maintenance status before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high DC current gain is necessary for efficient base drive in power amplification tasks. The TO-220F-A1 package is suitable for designs requiring robust thermal dissipation via a single-screw mount. Consider the 150 V collector-emitter voltage rating for medium-voltage switching environments. Evaluate the 25 MHz transition frequency against your signal speed requirements to ensure adequate performance margins.

Single Bipolar Transistors Part Context

This transistor belongs to the Panasonic Silicon NPN epitaxial planar family, engineered specifically for power amplification roles. It complements other discrete semiconductor devices used in general-purpose electronics. The triple diffusion planar construction ensures stable electrical characteristics across varying operating temperatures, supporting reliable operation in standard commercial and industrial electronic equipment.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.