Single Bipolar Transistors 2SD1312(0)-T-AZ product image

2SD1312(0)-T-AZ

$0.39
  • Description:SMALL SIGNAL BIPOLAR TRANSTR NPN
  • Series:-

SKU:f751410d2d62 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SD1312(0)-T-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is SMALL SIGNAL BIPOLAR TRANSTR NPN. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1312(0)-T-AZ

  • Description:SMALL SIGNAL BIPOLAR TRANSTR NPN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:135 @ 200mA, 1V
  • Power - Max:1 W
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SSIP
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1312(0)-T-AZ

2SD1312(0)-T-AZ

Single Bipolar Transistors Overview

The 2SD1312(0)-T-AZ is a small signal NPN bipolar junction transistor manufactured by Renesas Electronics Corporation. It is designed for general-purpose switching and amplification applications in through-hole configurations. Key electrical specifications include a collector-emitter breakdown voltage of 80 V, a maximum continuous collector current of 1 A, and a transition frequency of 120 MHz. The device supports a maximum power dissipation of 1 W, ensuring reliable operation within standard thermal limits for moderate-power circuit designs.

Single Bipolar Transistors Feature Summary

  • NPN single bipolar junction transistor structure
  • Through-hole mounting configuration
  • Moderate power handling capability

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Signal amplification stages
  • Low-power electronic control systems

Single Bipolar Transistors Procurement Notes

Verify the complete part number including suffixes to ensure correct packaging and tape/reel specifications. Confirm that the supplier provides official Renesas documentation or traceability records. Check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V breakdown and 1 A current capacity is required. Consider the 120 MHz transition frequency for high-speed switching needs. Ensure the through-hole package fits the target PCB layout constraints and thermal management strategy.

Single Bipolar Transistors Part Context

This component belongs to Renesas' discrete semiconductor portfolio, specifically within the small-signal bipolar transistor category. It serves as a fundamental active element for analog and digital circuit design, offering a balance of voltage rating and current drive suitable for various consumer and industrial electronics applications.

Single Bipolar Transistors Replacement Considerations

Consult official Renesas cross-reference guides for verified substitutes. Ensure replacement parts match the 80 V, 1 A, and 1 W specifications while maintaining compatible pinout and package dimensions.

2SD1312(0)-T-AZ2SD1312(0)-T-AZ
$0.39
Buy Now