2SD1407A-Y(F)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SD1407A-Y(F) is an NPN silicon triple diffused power transistor designed for power amplifier applications. It features a collector-emitter breakdown voltage of 100 V, a maximum collector current of 5 A, and a collector power dissipation of 30 W at 25°C case temperature. The device exhibits a low collector saturation voltage of 2.0 V (max) at IC = 4 A and IB = 0.4 A. It has a transition frequency of 12 MHz typical and is packaged in the JEDEC TO-220AB flange mount configuration.

Single Bipolar Transistors Feature Summary

• Triple diffused NPN silicon construction optimized for power amplifier applications
• Low collector saturation voltage to minimize conduction losses
• High breakdown voltage rating of 100 V for robust operation
• Complementary pairing with the 2SB1016A PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General electronics applications including computers and office equipment
• Industrial robots and measuring equipment
• Home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives as indicated in the datasheet. Confirm that the 'Y' suffix corresponds to the hFE classification range of 120 to 240. Ensure compliance with all applicable export laws and regulations regarding product usage. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs.

Single Bipolar Transistors Selection Notes

Select this component for power amplifier designs requiring high breakdown voltage and significant current handling capabilities. Consider the complementary 2SB1016A for push-pull configurations. Evaluate thermal management requirements carefully, as power dissipation is rated at 30 W only when the case temperature is maintained at 25°C. Verify that the application falls within general electronics use cases and avoids unintended high-reliability sectors.

Single Bipolar Transistors Part Context

The 2SD1407A belongs to the family of NPN triple diffused bipolar transistors manufactured by Toshiba Semiconductor and Storage. These devices utilize specific epitaxial planar processes to achieve high performance in power amplification roles. The part is distinct from smaller signal transistors due to its ability to handle up to 5 A of continuous collector current while maintaining low saturation voltages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SB1016A as the complementary PNP transistor for paired applications. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain (hFE) classification for the 'Y' suffix?

The 'Y' suffix indicates an hFE classification range of 120 to 240, measured at VCE = 5 V and IC = 1 A.

Is the 2SD1407A suitable for aerospace or medical equipment?

No, the product is not intended for use in equipment requiring extraordinarily high reliability, such as aerospace, medical equipment, or nuclear facilities.

What is the maximum base current allowed?

The absolute maximum rating for base current (IB) is 0.5 A.