2SD14500RA

Single Bipolar Transistors Overview

The Panasonic 2SD1450 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features an NS-B1 package with three pins and supports a maximum collector current of 0.5 A and a peak collector current of 1 A. The device withstands a collector-emitter voltage of 20 V and a collector-base voltage of 25 V. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 200 to 800, a transition frequency of 200 MHz, and a collector output capacitance of 10 pF. The component complies with the RoHS Directive.

Single Bipolar Transistors Feature Summary

• Optimized for high-density mounting applications
• Low collector-emitter saturation voltage for efficient switching
• Radial taping supply method for automated insertion

Single Bipolar Transistors Applications

• Low-frequency amplification circuits
• General electronic equipment
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact binning or packaging variations. Confirm compliance status and lifecycle stage directly with the manufacturer before procurement. Ensure design parameters remain within absolute maximum ratings to prevent failure.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring low-frequency signal amplification with moderate power dissipation capabilities. Evaluate the hFE rank requirements against circuit gain needs. Consider the thermal derating curve when determining operating conditions relative to ambient temperature constraints.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic discrete semiconductor transistor family. It utilizes a silicon NPN epitaxial planar structure housed in an NS-B1 package. The product line focuses on standard applications for general-purpose electronics and office equipment.

Single Bipolar Transistors Replacement Considerations

Consult official replacement lists for discontinued items. Verify pinout compatibility and electrical parameter equivalence before substituting with other NPN transistors.

Single Bipolar Transistors FAQ

What is the maximum collector power dissipation?

The maximum collector power dissipation is 300 mW at an ambient temperature of 25°C.

Does the 2SD1450 comply with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).

What is the typical forward current transfer ratio range?

The forward current transfer ratio (hFE) ranges from 200 to 800 depending on the specific rank classification.