2SD14850P

Single Bipolar Transistors Overview

The Panasonic 2SD14850P is a silicon PNP triple diffusion planar power transistor designed for high-power amplification. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 100 V. The device operates with a collector power dissipation of 60 W at 25°C case temperature, or 3.0 W in free air. It has a transition frequency of 20 MHz and a junction temperature limit of 150°C. The component utilizes an EIAJ SC-92 package (TOP-3F-A1) and serves as the complementary match to the 2SB1054.

Single Bipolar Transistors Feature Summary

• Triple diffusion planar construction optimized for high-power amplification applications
• Wide safe operation area ensuring robust performance under varying load conditions
• Full-pack package design allowing direct installation to heat sinks using a single screw

Single Bipolar Transistors Applications

• High power amplifier circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official documentation, as variations may exist. Confirm compliance with the RoHS Directive (EU 2002/95/EC). Check the manufacturer's website for the latest product lifecycle status, including maintenance or discontinuation plans, before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP power transistor with a 100V rating and up to 5A continuous current. Ensure thermal management strategies account for the 60W dissipation capability when mounted on a heat sink versus the 3.0W limit in free air. Verify that the required hFE rank aligns with the specific circuit gain requirements.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1485 series of silicon PNP power transistors. It is specifically engineered as the complementary counterpart to the 2SB1054 NPN transistor, facilitating balanced push-pull configurations in amplifier stages. The series utilizes a triple diffusion planar process to achieve stable electrical characteristics.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1054 as the complementary pair rather than a direct substitute. No other public substitute part numbers are documented in the provided source material.