2SD1618S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SD1618S-TD-E is a single NPN silicon bipolar junction transistor housed in a PCP (SC-62/SOT-89) surface-mount package. It features a collector-to-emitter voltage of 15 V, a collector current of 0.7 A, and a power dissipation of 500 mW at 25°C. The device exhibits a low saturation voltage of 25 mV at 5 mA and a gain-bandwidth product of 250 MHz. It operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• Very small physical size suitable for high-density hybrid ICs

Single Bipolar Transistors Applications

• High-density hybrid integrated circuits
• Small-sized electronic modules requiring compact components

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TD-E confirms the PCP package and reel shipping format. Confirm RoHS compliance status as indicated in the ordering information. Ensure the supplier provides the official datasheet No.1784-1/6 for accurate electrical validation before integration into designs.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with low saturation voltage is required for space-constrained applications. Consider the 15 V collector-to-emitter rating and 0.7 A continuous current limit. Evaluate thermal management needs given the 500 mW dissipation capability without a heat sink.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1618 series of NPN epitaxial planar silicon transistors manufactured by onsemi. The series is designed for general-purpose switching and amplification applications where small footprint and low saturation characteristics are prioritized over high-power handling capabilities.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other SC-62 or SOT-89 packaged NPN transistors having similar 15 V and 0.7 A ratings. Verify pinout compatibility and electrical parameters such as hFE and VCE(sat) to ensure functional equivalence in existing circuit layouts.

Single Bipolar Transistors FAQ

What is the maximum collector-to-emitter voltage for the 2SD1618S-TD-E?

The maximum collector-to-emitter voltage (VCEO) is 15 V.

What is the gain-bandwidth product of this transistor?

The gain-bandwidth product (fT) is 250 MHz under standard test conditions.

What is the typical collector-to-emitter saturation voltage at low current?

The typical VCE(sat) is 25 mV when the collector current is 5 mA and base current is 0.5 mA.