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2SD1619T-TD-E-FS is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is NPN EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SD1619T-TD-E-FS
- Description：NPN EPITAXIAL PLANAR SILICON
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SD1619T-TD-E-FS
Single Bipolar Transistors Overview
The Fairchild Semiconductor 2SD1619T-TD-E-FS is a single NPN epitaxial planar silicon bipolar junction transistor (BJT) manufactured by Sanyo Semicon Device. Designed for low-frequency amplifier and electronic governor applications, this component utilizes the TD-E package configuration. It serves as a discrete semiconductor device suitable for general-purpose switching and amplification tasks within consumer electronics and industrial control circuits.
Single Bipolar Transistors Feature Summary
- NPN epitaxial planar silicon construction
- Optimized for low-frequency amplifier operations
- Suitable for electronic governor circuit applications
Single Bipolar Transistors Applications
- Low-frequency audio or signal amplification stages
- Electronic governor control systems
- General-purpose discrete switching circuits
Single Bipolar Transistors Procurement Notes
Verify manufacturer documentation to confirm the specific pinout and electrical characteristics of the TD-E package variant. Ensure compatibility with existing circuit designs requiring NPN BJT components for low-frequency applications. Cross-reference datasheets from authorized distributors to validate part authenticity and technical specifications before integration.
Single Bipolar Transistors Selection Notes
Select this component when designing circuits requiring an NPN silicon transistor for low-frequency amplification or governor functions. The TD-E package offers a specific form factor suitable for certain board layouts. Evaluate thermal and voltage requirements against application needs to ensure reliable operation within the specified parameters.
Single Bipolar Transistors Part Context
This part belongs to the 2SD1619 series of bipolar transistors. It is functionally related to variants such as 2SD1619T-TD-E-SY. The device represents a standard discrete semiconductor solution for analog signal processing and control applications in consumer and industrial electronics.
Single Bipolar Transistors Replacement Considerations
Direct substitutes include other NPN BJT transistors with similar low-frequency amplifier capabilities. Verify pin compatibility and package dimensions when replacing with equivalent parts from different manufacturers to ensure mechanical and electrical fit.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
