2SD1622T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SD1622T-TD-E is a surface-mount NPN bipolar junction transistor housed in a PCP package. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 80 V. The device has a collector-base voltage of 100 V and an emitter-base voltage of 6 V. Key electrical parameters include a minimum DC current gain (hFE) of 70, a maximum power dissipation of 1.5 W, and a transition frequency of 150 MHz. It operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 80 V collector-emitter breakdown for robust switching applications
• High current handling capacity of 3 A suitable for medium-power load driving
• Wide operating temperature range extending up to 150°C for thermal resilience

Single Bipolar Transistors Applications

• General-purpose high-voltage switching circuits
• Audio amplifier output stages
• Industrial control logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TD-E against official datasheets to confirm pinout and marking orientation. Ensure the component matches the required PCP package dimensions for PCB footprint compatibility. Cross-reference the manufacturer part number directly with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status through the latest product release notes provided by onsemi.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor requires 80 V blocking voltage and 3 A continuous current in a compact surface-mount form factor. Compare hFE minimums against circuit base drive requirements to ensure adequate saturation. Evaluate thermal management needs given the 1.5 W power dissipation limit in the PCP package. Consider the 150 MHz transition frequency for signal integrity in moderate-speed switching environments.

Single Bipolar Transistors Part Context

This device belongs to the 2SD1622 series of NPN epitaxial planar silicon transistors designed for general-purpose use. It complements PNP counterparts like the 2SA1015 in push-pull configurations. The PCP package provides a balance between thermal performance and board space efficiency compared to larger through-hole options.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other 3 A, 80 V NPN transistors in PCP packages such as the 2SD1624S-TD-E, provided voltage ratings are sufficient. Verify that replacement parts maintain equivalent hFE ranges and transition frequencies to preserve circuit timing and gain characteristics.