2SD1624T-C-TD-E

Single Bipolar Transistors Overview

The onsemi 2SD1624T-C-TD-E is a single NPN bipolar junction transistor designed for high-current switching applications. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 3 A. The device supports a maximum power dissipation (Pd) of 1.5 W and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a minimum DC current gain (hFE) of 35, a transition frequency (ft) of 150 MHz, and a collector-base voltage (VCBO) of 60 V. The component is housed in a PCP surface-mount package with three pins.

Single Bipolar Transistors Feature Summary

• High current handling capability suitable for demanding switching loads
• Wide operating temperature range ensuring reliability in varied environments
• Optimized transition frequency for effective high-speed performance

Single Bipolar Transistors Applications

• General purpose high-current switching circuits
• Power management systems requiring robust NPN control
• Industrial equipment driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'C' against official datasheets to confirm any distinct manufacturing or testing variations compared to standard variants. Ensure compatibility with PCP surface-mount assembly processes. Confirm that the 50 V rating aligns with circuit requirements. Check for RoHS compliance status if required by project specifications. Validate pinout configuration prior to PCB layout finalization.

Single Bipolar Transistors Selection Notes

Select this component when a 3 A NPN transistor with 50 V breakdown is required. Consider the 1.5 W power dissipation limit for thermal management design. The 150 MHz frequency response suits general switching rather than RF amplification. Evaluate the PCP package dimensions for space constraints. Compare hFE minimums against base drive capabilities.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1624S series of NPN transistors from onsemi. It serves as a discrete semiconductor solution within the broader portfolio of bipolar junction transistors. The component complements other high-current devices in the manufacturer's lineup, offering a balance between voltage rating and current capacity for standard electronic applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.